The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells, where the effects
of the variation of CIGS, CdS, and ZnO layers are presented. Additionlly the influence of the variation of doping and the defects
density of shallow uniform donors and acceptors types are also presented. The analyse of the simulation results shows that
recombination inside the space charge region (SCR) decrease more our CIGS solar cell model performance. We also found that the
electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at
1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the SCR. We
also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model
is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has
a strong influence on the different electrical parameters. Yet, good optimization of performance of the CIGS-based solar cell
necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the
preparation of our next paper. We contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature results. The simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03 μm, the buffer layer thickness is in the range of 0.02 to 0.06 μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.

Numerical simulation, CAPS-1D, CIGS solar cell, shallow uniform donors and acceptors defect density