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Numerical Simulation of the Solar Cell Based on the Quaternary System Cu(In, Ga)Se2,
Lien de l'article: 10.5772/intechopen.1003946
Discipline: Materials Science
Auteur(s): Daouda Oubda, Bawindsom Marcel Kébré, Soumaïla Ouédraogo, François Zougmoré and Zacharie Koalga
Renseignée par : KEBRE Bawindsom Marcel
Résumé

Energy in one form or another has been and remains an essential vital element for humanity. It is positioned as the essential propellant for the accomplishment of any human activity. Its sources have diversified over time to meet the ever-increasing needs of industry and consumers. This chapter deals with the solar cell based on copper, indium, gallium, and diselenide (CIGS), which is a photovoltaic technology in constant evolution and demonstrates very interesting record yields. The aim is to show through the results obtained from the numerical simulation that the solar cells based on CIGS have the capacity in terms of energy conversion to meet part of the energy needs of the world population. In this chapter, after describing and modeling the Mo/Cu(In,Ga)Se2/CdS/ZnO structure, we noted from the obtained results that Shockley-Read-Hall (SRH) recombination is the predominant mode of recombination in the CIGS solar cell, and these recombinations more affect the performance of the solar cell inside the space charge region (SCR).

Mots-clés

solar cell, CIGS absorber, CdS buffer layer, SCAPS-1D, operating temperature, series and shunts resistances, electrical parameters, SRH recombinatio

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