Numerical Simulation of the Dominate Recombination Mechanism in the Chalcopyrite Cu(In,Ga)Se2 Thin Film Solar Cell

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Résumé

In a context marked by the increased use of energy which powers all the
activities that make up economic life. The search for short and long term
solutions involves improving the performance of renewable energy produc
tion systems in general and solar photovoltaic (PV) energy in particular. In
the field of solar PV, research is underway to meet these requirements. There
fore, in this paper we present a numerical characterization of chalcopyrite
copper-indium-gallium-diselenide thin film solar cells using one dimen
sional simulation program. Charge carrier recombinations play a major role
in CIGS-based solar cells, as a result, the reduction in the lifespan of the charge
carriers in the volume of the absorber leads to their recombination and ex
plains the drop in performance. On the other hand, OC
V increases with the
increase in the gap and
J
SC
decreases. If the energy of the conduction band
discontinuity is equal to 0.1 eV, FF and η decrease, SC
J
denly for
E
E
C
0.4 eV
decreases sud
∆ = . From our study, it appears obvious that as the sur
face recombination speed increases, the electrical performance of the solar
cell decreases. When the interface recombination speed is 103 cm/s, for
0.3
C
0.6 eV
≤∆ ≤ , we note a significant decrease in efficiency with a value
of 20.9%. The activation energy, denoted
a
E , is a phenomenological param
eter used to locate the place of predominance of SRH type recombination
mechanisms in the CIGS solar cell. The study shows through the J V
characteristic, a significant loss of the
J
SC
−
by SRH recombination and
confirm its domination. The consequences are therefore important, when he lifetime of the electron-hole pairs is at its basic value (
≤∆ ≤ , we note a reduction of 21.6% electrical conversion ef
ficiency. The activation energy of a value of around 1.3 eV greater than the
gap of the absorber (
Vb
E =
g
1.2 eV
s
) attest that SRH recombinations predomi
nate inside the SCR.

Mots-clés

Numerical Simulation, Thin Film Solar Cell, Dominate Recombination Mechanism, Shockley-Read-Hall Recombination, Activation Energy