The mechanisms related to the initial stages of the nucleation and growth mechanism of cadmium on (100) and (111) ntype silicon have been studied as a function of different potential steps. Within appropriate potential ranges the initial deposition kinetics corresponds to a model including progressive nucleation and diffusion controlled cluster growth. Nucleation rate and the number of atoms in the critical nucleus are determined from the analysis of current transients at different overpotentials. Values of Ncrit are 16 ± 1 (-16 mV ≥ η ≥ -19 mV) and 7 ± 1 (-14 mV ≥ η ≥ -18 mV) for n-Si(100) and n-Si(111) respectively

Electrodeposition; n-Si(111); n-Si(100); Nucleation and growth mechanism.