MoSe2 single crystals were grown by chemical vapor transport using TeCl4 as transport agents in the
temperature gradient 1020–980 1C. They were characterized by scanning electron microscopy (SEM),
optical microscopy, image analysis coupled with SEM, microanalysis by SEM-EDX, X-ray fluorescence,
inductively coupled plasma (ICP), X-ray photoelectron spectroscopy (XPS) and electrical conductivity.
The characterizations showed that single crystals are perfectly homogeneous, stoichiometric and have
very few defects and clean surfaces with areas in the range of 35–100 mm2. Single crystals grown by
TeCl4 showed a high electrical conductivity. Their properties were highly dependent on the quality of
the polycrystalline powders used for the growth.

Characterization, Impurities, Single crystal growth, Transition metal dichalcogenides, Semiconducting materials