This study examines the effect of electron losses on the performance of polycrystalline silicon photovoltaic (pc-Si PV) cells using a three-dimensional (3D) approach. Aging and degradation are identified as the primary causes of these losses, quantified by the intrinsic junction recombination velocity (Sf0). The analysis focuses on the p-n junction, where carrier losses significantly influence key performance metrics such as power conversion efficiency (PCE) and shunt resistance (Rsh). Simulation results indicate that as Sf0 increases from 0 to a threshold of 1.790 × 10⁴ cm/s, the PCE and Rsh decrease by approximately 20 % and 32 %, respectively. The study further demonstrates that a reduction in Rsh from 1272.20 Ω.cm² to 5.48 Ω.cm² significantly increases the shunt current density, rising from 0 mA/cm² to 53.59 mA/cm², indicating elevated leakage currents. This work highlights the critical role of electron losses in determining the efficiency and stability of pc-Si PV cells. By employing a 3-D approach, the study provides valuable intuition into degradation mechanisms and suggests pathways for improving PV cell performance and durability.

Polycrystalline PV cell, Electron losses, Intrinsic junction recombination velocity, Leakage current, 3-D model