The purpose of this work is to present a new technique for determining recombination parameters of excess minority
carrier in a multicristallin silicon solar cell under frequency modulated multispectral light.
The complex photocurrent density Jph (ω, L) is presented as a calibrated function of the diffusion length L. Taking the junction recombination velocity Sf large enough to realize short circuit condition (Sf ≥ 6x106 cm.s-1); this calibrated function represents now the theoretical complex short circuit current density Jsc (ω, L). The phase Θsc (ω, L) of this theoretical complex short circuit current density is also presented as a calibrated function of the diffusion length L.
The experimental short circuit current phase Θscexp plot intercepts the theoretical one and yields the effective excess minority carrier diffusion length Leff. Once the effective diffusion length Leff is determined, we can then calculate effective excess minority carrier back surface recombination velocity Sb using the theoretical expression
previously determined.

Frequency modulation Solar cell Recombination parameters Amplitude Phase