In this article, numerical modeling and simulation using SCAPS-1D software has been used to explore the performance of CIGS-based solar cells when some parameters are modified. Starting from a baseline model that rigorously reproduces the experimental results, the absorber properties such as defect density, band-gap and acceptor concentration have been investigated and the optimal values to obtain high-efficiency CIGS-base solar cells have been proposed. The optimal parameters obtained are used to develop a new ultra-thin CIGS cell architecture. The results suggest that the use of 1000 nm Electron Back Reflector (EBR) layer with 1.3 eV band-gap at the CIGS/Mo interface provides higher electrical parameters than standard cells and materials such as MoS2, AgO, SnS, Cu2Te, CdSnP2, CuIn5S8, PbCuSbS3 can be successful EBR in ultra-thin CIGS solar cells. This optimized structure provides a serious pathway toward the development of ultra-thin cells with performance close to the best CIGS cells with standard thicknesses.

Cu(In Ga)Se2 Band-Gap Defect Density