This work focused on the impacts of the base doping rate (Nb) and the emitter doping rate (Ne) on the internal
quantum efficiency (IQE) of a bifacial polycrystalline silicon solar cell, under static conditions and monochromatic
illumination. IQE is defined as the ratio of the number of electron-hole pairs or charge carriers generated to the number of photons absorbed within the active layer of the device. Also known as the quantum yield, IQE accounts for the recombination loss. A three-dimensional model of a grain of this solar cell was made, and an improved expression of IQE and the function of Nb and Ne was established. The simulation enabled obtaining IQE curves, which were interpreted for the front side and the rear side illuminations. The IQE decreased as the doping rate increased. The behavior of the diffusion rate and the diffusion length revealed the sources of the decreasing IQE.